參數(shù)資料
型號(hào)： IS62C1024-70T
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 128K x 8 HIGH-SPEED CMOS STATIC RAM
中文描述： 128K X 8 STANDARD SRAM, 70 ns, PDSO32
封裝： TSOP1-32
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 423K
代理商： IS62C1024-70T
Integrated Circuit Solution Inc.
3
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T
BIAS
Temperature Under Bias
–10 to +85
°C
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.5
W
I
OUT
DC Output Current (LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
= –1.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 2.1 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.5
V
V
IL
Input LOW Voltage
(1)
–0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
Com.
–5
5
μA
Ind.
–10
10
Notes:
1. V
IL
= –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-35 ns
Min. Max.
-45 ns
Min. Max.
-55 ns
Min. Max.
-70 ns
Min. Max.
Symbol Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
V
CC
= Max.,
CE
= V
IL
Com.
—
150
—
135
—
120
—
90
mA
Supply Current
I
OUT
= 0 mA, f = f
MAX
Ind.
—
160
—
145
—
130
—
100
I
SB
1
TTL Standby Current
V
CC
= Max.,
V
IN
= V
IH
or V
IL
,
CE1
≥
V
IH
,
or CE2
≤
V
IL
, f = 0
Com.
—
40
—
40
—
40
—
40
mA
(TTL Inputs)
Ind.
—
60
—
60
—
60
—
60
I
SB
2
CMOS Standby
V
CC
= Max.,
CE1
≥
V
CC
– 0.2V,
CE2
≤
0.2V, V
IN
> V
CC
– 0.2V,
or V
IN
≤
0.2V, f = 0
Com.
—
30
—
30
—
30
—
30
mA
Current (CMOS Inputs)
Ind.
—
40
—
40
—
40
—
40
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相關(guān)PDF資料
PDF描述
IS62C1024-35T 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-35TI 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45Q 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-45T 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62C1024-70TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-70U 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IC-SM-1MB CMOS SRAM
IS62C1024-70W 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024-70WI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C10248AL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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