參數(shù)資料
型號: IS62LV256L
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 8 LOW VOLTAGE CMOS STATIC RAM
中文描述: 32K的× 8低電壓CMOS靜態(tài)RAM
文件頁數(shù): 2/7頁
文件大?。?/td> 52K
代理商: IS62LV256L
IS62LV256L
2
Integrated Silicon Solution, Inc.
SR033-1A
04/27/99
ISSI
PIN CONFIGURATION
28-Pin SOJ
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP
PIN DESCRIPTIONS
A0-A14
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
H
H
L
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +4.6
–55 to +125
–65 to +150
0.5
20
Unit
V
°
C
°
C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
相關(guān)PDF資料
PDF描述
IS62LV256L-20J 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV256L-20JI 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV256L-20T 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV256L-20TI 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS62LV256L-25J 32K x 8 LOW VOLTAGE CMOS STATIC RAM
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