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參數(shù)資料
| 型號(hào)： | IS62U6416LL-20B |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 200 ns, PBGA48 |
| 封裝： | MINI, BGA-48 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大小： | 93K |
| 代理商： | IS62U6416LL-20B |
IS62U6416LL
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
SR034-0C
12/09/98
ISSI
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least
one of the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
) [ (
LB
) = (
UB
) ] (
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(
WE
Controlled)
UNDEFINED
UNDEFINED
t
WC
t
SCE
t
PWB
t
AW
t
HA
HIGH-Z
HIGH-Z
t
PWE
t
HD
t
SA
t
HZWE
ADDRESS
CE
LB, UB
WE
WRITE
(1)
D
OUT
D
IN
t
LZWE
t
SD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62U6416LL-20BI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20K | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20TI | 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62U6416LL-20BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20K | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20KI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
| IS62U6416LL-20TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM |
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