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| 型號： | IS62WV12816ALL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 128K的× 16低壓超低功耗的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 7/17頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IS62WV12816ALL |
IS62WV12816ALL, IS62WV12816BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05
7
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
45 ns
55 ns
70 ns
Symbol
t
RC
t
AA
t
OHA
t
ACS1/
t
ACS2
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCS1/
t
HZCS2
(2)
t
LZCS1/
t
LZCS2
(2)
t
BA
t
HZB
t
LZB
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
45
—
55
—
70
—
ns
Address Access Time
—
45
—
55
—
70
ns
Output Hold Time
10
—
10
—
10
—
ns
CS1/
CS2 Access Time
—
45
—
55
—
70
ns
OE
Access Time
—
20
—
25
—
35
ns
OE
to High-Z Output
—
15
—
20
—
25
ns
OE
to Low-Z Output
5
—
5
—
5
—
ns
CS1/
CS2 to High-Z Output
0
15
0
20
0
25
ns
CS1/
CS2 to Low-Z Output
10
—
10
—
10
—
ns
LB
,
UB
Access Time
—
45
—
55
—
70
ns
LB
,
UB
to High-Z Output
0
15
0
20
0
25
ns
LB
,
UB
to Low-Z Output
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
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PDF描述 |
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| IS62WV12816BLL-55BI | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816BLL-55T | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816BLL-55TI | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816BLL-55TLI | 128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816ALL-70B2I | Circular Connector; No. of Contacts:6; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV12816ALL-70B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV12816ALL-70BI | 功能描述:靜態(tài)隨機存取存儲器 2Mb, Low Power/Power Saver,Async,128K x 16,70ns,1.65v~2.2v,48 Ball mBGA (6x8 mm) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV12816ALL-70BI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb, Low Power/Power Saver,Async,128K x 16,70ns,1.65v~2.2v,48 Ball mBGA (6x8 mm) RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV12816ALL-70BLI | 功能描述:靜態(tài)隨機存取存儲器 2Mb, Low Power/Power Saver,Async,128K x 16,70ns,1.65v~2.2v,48 Ball mBGA (6x8 mm), Leadfree RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV12816ALL-70BLI-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb, Low Power/Power Saver,Async,128K x 16,70ns,1.65v~2.2v,48 Ball mBGA (6x8 mm), Leadfree RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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