參數(shù)資料
型號(hào)： IS62WV1288BLL-55HLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
中文描述： 128K X 8 STANDARD SRAM, 55 ns, PDSO32
封裝： LEAD FREE, PLASTIC, STSOP1-32
文件頁數(shù)： 1/15頁
文件大?。?/td> 111K
代理商： IS62WV1288BLL-55HLI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
06/20/05
1
IS62WV1288ALL
IS62WV1288BLL
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
128K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
High-speed access time: 45ns, 55ns, 70ns
CMOS low power operation:
30 mW (typical) operating
15 μW (typical) CMOS standby
TTL compatible interface levels
Single power supply:
1.65V--2.2V V
DD
(62WV1288ALL)
2.5V--3.6V V
DD
(62WV1288BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Industrial temperature available
Lead-free available
DESCRIPTION
The
ISSI
IS62WV1288ALL / IS62WV1288BLL are high-
speed, 1M bit static RAMs organized as 128K words by 8
bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected), the device assumes a standby mode at which
the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(
WE
) controls both writing and reading of the memory.
The IS62WV1288ALL and IS62WV1288BLL are packaged
in the JEDEC standard 32-pin TSOP (TYPEI), sTSOP
(TYPEI), SOP, and 36-pin mini BGA.
FUNCTIONAL BLOCK DIAGRAM
JUNE 2005
A0-A16
CS1
OE
WE
128K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
CS2
相關(guān)PDF資料
PDF描述
IS62WV1288BLL-55QI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL-55QLI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL-55TI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288BLL-55TLI 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV20488ALL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS62WV1288BLL-55HLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV1288BLL-55HLI-TR/U382 制造商:Integrated Silicon Solution Inc 功能描述:
IS62WV1288BLL-55QI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 55ns 2.5v-3.6v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV1288BLL-55QI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 55ns 2.5v-3.6v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS62WV1288BLL-55QLI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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