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參數(shù)資料
| 型號(hào)： | IS62WV5128ALL-70T2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封裝： | TSOP2-32 |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 83K |
| 代理商： | IS62WV5128ALL-70T2 |
6
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/30/03
IS62WV5128ALL, IS62WV5128BLL
ISSI
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CS1
=
OE
= V
IL
,
WE
= V
IH
)
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
55 ns
70 ns
Symbol
t
RC
t
AA
t
OHA
t
ACS1
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCS1
t
LZCS1
Parameter
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
55
—
70
—
ns
Address Access Time
—
55
—
70
ns
Output Hold Time
10
—
10
—
ns
CS1
Access Time
—
55
—
70
ns
OE
Access Time
—
25
—
35
ns
OE
to High-Z Output
—
20
—
25
ns
OE
to Low-Z Output
5
—
5
—
ns
CS1
to High-Z Output
0
20
0
25
ns
CS1
to Low-Z Output
10
—
10
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to
V
DD
-0.2V/V
DD
-0.3V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62WV5128ALL-70T2I | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70TI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL-55H | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL-55HI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62WV5128ALL-70T2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128BLL-55BI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV5128BLL-55BI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 512Kx8 55ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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