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參數資料
| 型號： | IS62WV5128BLL-70T2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 512K X 8 STANDARD SRAM, 70 ns, PDSO32 |
| 封裝： | TSOP2-32 |
| 文件頁數： | 5/14頁 |
| 文件大?。?/td> | 83K |
| 代理商： | IS62WV5128BLL-70T2 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
04/30/03
5
IS62WV5128ALL, IS62WV5128BLL
ISSI
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128ALL
(1.65V - 2.2V)
Symbol
Parameter
Test Conditions
Max.
70 ns
25
30
10
10
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V Com.
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
,
f = 1 MH
Z
Com.
Ind.
mA
I
CC
1
mA
Ind.
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
15
15
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
62WV5128BLL
(2.5V - 3.6V)
Symbol
Parameter
Test Conditions
Max.
55 ns
40
45
15
15
Max.
70 ns
35
40
15
15
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
CS1
= 0.2V Com.
WE
= V
DD
-0.2V
f=1
MHZ
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
,
f = 1 MH
Z
Com.
Ind.
mA
I
CC
1
mA
Ind.
I
SB
1
TTL Standby Current
(TTL Inputs)
Com.
Ind.
0.35
0.35
0.35
0.35
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
15
15
15
15
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
相關PDF資料 |
PDF描述 |
|---|---|
| IS62WV5128BLL-70TI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70H | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70HI | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128ALL-70T | 512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62WV5128BLL-70TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128DALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV5128DBLL-45BLI | 功能描述:靜態(tài)隨機存取存儲器 4Mb, 2.3v-3.6v, 45ns 512K x 8 Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV5128DBLL-45BLI-TR | 功能描述:靜態(tài)隨機存取存儲器 4Mb, 2.3v-3.6v, 45ns 512K x 8 Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV5128DBLL-45HLI | 功能描述:靜態(tài)隨機存取存儲器 4Mb 512K x 8 45ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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