參數(shù)資料
型號(hào): IS62WV6416ALL-55TLI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
中文描述: 64K X 16 STANDARD SRAM, 55 ns, PDSO44
封裝: LEAD FREE, PLASTIC, TSOP2-44
文件頁數(shù): 7/17頁
文件大小: 116K
代理商: IS62WV6416ALL-55TLI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
7
IS62WV6416ALL, IS62WV6416BLL
ISSI
IS62WV6416BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
Parameter
Test Conditions
Max.
45
17
17
12
5
5
1.2
1.2
Max.
55
15
15
10
5
5
1.2
1.2
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
mA
I
CC
1
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
mA
I
SB
1
mA
OR
ULB Control
V
DD
= Max., V
IN
= V
IH
or V
IL
CS1
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
V
DD
= Max.,
CS1
V
DD
– 0.2V,
CS2
0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
Com.
Ind.
typ.
(2)
15
15
5
15
15
5
μA
OR
ULB Control
V
DD
= Max.,
CS1
= V
IL
, CS2=V
IH
V
IN
0.2V, f = 0;
UB
/
LB
= V
DD
– 0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.0V, T
A
=25
o
C. Not 100% tested.
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IS62WV6416BLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
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IS62WV6416BLL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV6416BLL-45BLI 制造商:Integrated Silicon Solution Inc 功能描述:
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