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參數資料
| 型號： | IS62WV6416BLL-45BI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 45 ns, PBGA48 |
| 封裝： | 6 X 8 MM, MINI, BGA-48 |
| 文件頁數： | 4/17頁 |
| 文件大?。?/td> | 116K |
| 代理商： | IS62WV6416BLL-45BI |
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
06/03/05
IS62WV6416ALL, IS62WV6416BLL
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.7-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.7-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.7-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.7-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
1
μA
I
LO
Output Leakage
–1
1
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IS62WV6416BLL-45BLI | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS62WV6416BLL-45T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-45TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55B2I | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
| IS62WV6416BLL-55BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM |
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