- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377572 > IS63LV1024-8KL (INTEGRATED SILICON SOLUTION INC) 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT PDF資料下載
參數(shù)資料
| 型號(hào)： | IS63LV1024-8KL |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| 中文描述： | 128K X 8 STANDARD SRAM, 8 ns, PDSO32 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, MS-027, SOJ-32 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大小： | 323K |
| 代理商： | IS63LV1024-8KL |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
1/26/07
5
IS63LV1024
IS63LV1024L
AC TEST LOADS
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
-10 ns
Min.
-12 ns
Min.
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
(2)
t
HZOE
(2)
t
LZCE
(2)
t
HZCE
(2)
t
PU
t
PD
Parameter
Min.
Max.
Max.
Max.
Unit
Read Cycle Time
8
—
10
—
12
—
ns
Address Access Time
—
8
—
10
—
12
ns
Output Hold Time
2
—
2
—
2
—
ns
CE
Access Time
—
8
—
10
—
12
ns
OE
Access Time
—
4
—
5
—
6
ns
OE
to Low-Z Output
0
—
0
—
0
—
ns
OE
to High-Z Output
0
4
0
5
0
6
ns
CE
to Low-Z Output
3
—
3
—
3
—
ns
CE
to High-Z Output
0
4
0
5
0
6
ns
CE
to Power Up Time
0
—
0
—
0
—
ns
CE
to Power Down Time
—
8
—
10
—
12
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
loading specified in Figure 1.
2. Tested with the loading specified in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Figure 1
OUTPUT
V
T
= 1.5V
Z
OUT
= 50
Ω
50
Ω
317
Ω
5 pF
Including
jig and
scope
351
Ω
OUTPUT
3.3V
Figure 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS63LV1024L-10HL | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10JLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10KLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10TL | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10TLI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS63LV1024-8KL-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 8ns 3.3v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024-8T | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 8ns 32-Pin TSOP-II |
| IS63LV1024-8TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。