參數(shù)資料
型號: IS63LV1024
廠商: Integrated Silicon Solution, Inc.
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
中文描述: 128K的× 8高速CMOS靜態(tài)RAM 3.3革命引腳排列
文件頁數(shù): 2/8頁
文件大?。?/td> 68K
代理商: IS63LV1024
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. H
10/02/00
IS63LV1024
ISSI
PIN CONFIGURATION
32-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A4
A5
A6
A7
A16
A15
A14
A13
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A12
A11
A10
A9
A8
PIN DESCRIPTIONS
A0-A16
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Bidirectional Ports
Vcc
Power
GND
Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
V
°
C
°
C
W
0.5 to Vcc + 0.5
55 to +125
65 to +150
1.0
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled H
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
H
L
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A4
A5
A6
A7
A16
A15
A14
A13
OE
I/o7
I/O6
GND
Vcc
I/O5
I/O4
A12
A11
A10
A9
A8
PIN CONFIGURATION
32-Pin TSOP (Type II) (T)
相關(guān)PDF資料
PDF描述
IS63LV1024-10J 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10JI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10K 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10KI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10T 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS63LV1024_07 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10J 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024-10JI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024-10J-TR 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024-10K 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 10ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray