參數(shù)資料
型號(hào)： IS63LV1024L-12BLI
廠商： INTEGRATED SILICON SOLUTION INC
元件分類： DRAM
英文描述： 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
中文描述： 128K X 8 STANDARD SRAM, 12 ns, PBGA36
封裝： 8 X 10 MM, LEAD FREE, MINI, BGA-36
文件頁(yè)數(shù)： 1/18頁(yè)
文件大?。?/td> 323K
代理商： IS63LV1024L-12BLI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
1/26/07
1
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS63LV1024
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
High-speed access times:
8, 10, 12 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
Lead-free Available
DESCRIPTION
The
ISSI
IS63LV1024/IS63LV1024L is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using
ISSI
's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 μW (typical) with CMOS input levels.
The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
CE
OE
WE
128K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
JANUARY 2007
相關(guān)PDF資料
PDF描述
IS63LV1024L-12JL 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10K 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10KI TRANS PNP W/RES 30HFE NS-B1
IS63LV1024L-10T 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
IS63LV1024L-10TI TRANS PNP W/RES 40HFE NS-B1
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS63LV1024L-12BLI-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-12H 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-12H-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-12J 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb 128Kx8 12ns 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS63LV1024L-12JI 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 12ns 32-Pin SOJ
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