參數(shù)資料
型號(hào): IS63LV1024L-12JL
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
中文描述: 128K X 8 STANDARD SRAM, 12 ns, PDSO32
封裝: 0.300 INCH, LEAD FREE, PLASTIC, SOJ-32
文件頁(yè)數(shù): 4/18頁(yè)
文件大?。?/td> 323K
代理商: IS63LV1024L-12JL
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. I
1/26/07
IS63LV1024
IS63LV1024L
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
IS63LV1024L POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
Min.
-10 ns
Min.
-12 ns
Min.
Symbol Parameter
Test Conditions
Max.
Max.
Max.
Unit
I
CC
1
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
typ.
(2)
Com.
Ind.
100
110
75
35
40
95
105
70
30
35
90
100
65
25
30
mA
I
SB
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = Max
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
DD
= Max.,
CE
V
DD
– 0.2V,
mA
I
SB
1
Com.
Ind.
15
20
15
20
15
20
mA
I
SB
2
Com.
Ind.
typ.
(2)
1
1
1
mA
1.5
0.05
1.5
0.05
1.5
0.05
(CMOS Inputs)
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C. Not 100% tested.
IS63LV1024 POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
Min.
-10 ns
Min.
-12 ns
Min.
Symbol Parameter
Test Conditions
Max.
Max.
Max.
Unit
I
CC
1
V
DD
Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
typ.
(2)
160
170
105
150
160
95
130
140
75
90
mA
Ind. (@15 ns)
I
SB
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = Max
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
DD
= Max.,
CE
V
DD
– 0.2V,
Com.
Ind.
55
55
45
45
40
40
mA
I
SB
1
Com.
Ind.
25
30
25
30
25
30
mA
I
SB
2
Com.
Ind.
typ.
(2)
5
5
10
0.5
5
mA
10
0.5
10
0.5
(CMOS Inputs)
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C. Not 100% tested.
相關(guān)PDF資料
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IS63LV1024L-10K 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
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