- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377573 > IS63LV1024L (Integrated Silicon Solution, Inc.) 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT PDF資料下載
參數(shù)資料
| 型號： | IS63LV1024L |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| 中文描述： | 128K的× 8高速CMOS靜態(tài)RAM 3.3革命引腳排列 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | IS63LV1024L |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
08/07/02
7
IS63LV1024L
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8 ns
-10 ns
Min.
-12 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Min.
Max.
Max.
Max.
Unit
Write Cycle Time
8
—
10
—
12
—
ns
CE
to Write End
7
—
7
—
8
—
ns
Address Setup Time to
Write End
8
—
8
—
8
—
ns
t
HA
Address Hold from
Write End
0
—
0
—
0
—
ns
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Address Setup Time
0
—
0
—
0
—
ns
(1)
WE
Pulse Width (
OE
High)
7
—
7
—
8
—
ns
(2)
WE
Pulse Width (
OE
Low)
8
—
10
—
12
—
ns
Data Setup to Write End
5
—
5
—
6
—
ns
Data Hold from Write End
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
4
—
5
—
6
ns
WE
HIGH to Low-Z Output
3
—
3
—
3
—
ns
Notes:
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2
(
CE
Controlled,
OE
= HIGH or LOW)
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
CE_WR1.eps
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS63LV1024L-10B | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10BI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10HI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10J | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10JI | 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS63LV1024L-10B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10HI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT |
| IS63LV1024L-10HL | 功能描述:靜態(tài)隨機存取存儲器 1Mb 128Kx8 12ns 3.3v Async 靜態(tài)隨機存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS63LV1024L-10HLI | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 10ns 32-Pin STSOP-I |
發(fā)布緊急采購，3分鐘左右您將得到回復。
