參數(shù)資料
型號(hào)： IS64LV25616AL-12BLA3
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述： 256K X 16 STANDARD SRAM, 12 ns, PBGA48
封裝： 8 X 10 MM, LEAD FREE, MINI, BGA-48
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 131K
代理商： IS64LV25616AL-12BLA3
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
1
IS64LV25616AL
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
High-speed access time: 10, 12 ns
CMOS low power operation
Low stand-by power:
Less than 5 m
A
(typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Temperature Offerings:
Option A1: –40
o
C to +85
o
C
Option A2: –40
o
C to +105
o
C
Option A3: –40
o
C to +125
o
C
Lead-free available
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
DESCRIPTION
The
ISSI
IS64LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
JULY 2006
相關(guān)PDF資料
PDF描述
IS64LV25616AL-12TA2 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TA3 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TLA2 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TLA3 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV6416L 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS64LV25616AL-12BLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M (256Kx16) 12ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12TA2 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64LV25616AL-12TA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 256Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12TA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4Mb 256Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64LV25616AL-12TLA2 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
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