參數(shù)資料
型號: IS64LV25616AL-12TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
中文描述: 256K X 16 STANDARD SRAM, 12 ns, PDSO44
封裝: PLASTIC, TSOP2-44
文件頁數(shù): 4/14頁
文件大小: 131K
代理商: IS64LV25616AL-12TA3
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
IS64LV25616AL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Options
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
-0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
A1
A2
A3
-2
-5
-10
2
5
10
μA
I
LO
Output Leakage
GND
V
OUT
V
DD
,
Outputs Disabled
A1
A2
A3
-2
-5
-10
2
5
10
μA
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
TERM
Terminal Voltage with Respect to GND
–0.5 to V
DD
+0.5
V
V
DD
V
DD
Related to GND
–0.3 to +4.0
V
T
STG
Storage Temperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options
Ambient Temperature
V
DD
A1
–40°C to +85°C
3.3V +10%, -5%
A2
–40°C to +105°C
3.3V +10%, -5%
A3
–40°C to +125°C
3.3V +10%, -5%
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