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參數(shù)資料
| 型號： | IS64LV25616AL-12TLA2 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 5/14頁 |
| 文件大小： | 131K |
| 代理商： | IS64LV25616AL-12TLA2 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
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IS64LV25616AL
ISSI
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10
-12
Symbol
Parameter
Test Conditions
Options
Min. Max.
Min. Max.
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
A1
A2
A3
—
—
—
100
—
—
—
—
—
—
110
120
mA
I
SB
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = f
MAX
.
A1
A2
A3
—
—
—
50
—
—
—
—
—
—
55
60
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
A1
A2
A3
—
—
—
20
—
—
—
—
—
—
30
40
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
A1
A2
A3
—
—
—
—
15
—
—
5
—
—
—
—
—
25
35
5
mA
typ
(2)
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Shaded area product
in development
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64LV25616AL-12TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb 256Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb 256Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12TLA3TRU967A | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64LV51216 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV51216-12TA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
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