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參數(shù)資料
| 型號： | IS64LV25616AL-12TLA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 256K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IS64LV25616AL-12TLA3 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
07/05/06
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IS64LV25616AL
ISSI
WRITE CYCLE NO. 2
(
WE
Controlled.
OE
is HIGH During Write Cycle)
(1,2)
DATA UNDEFINED
LOW
t
WC
VALID ADDRESS
t
PWE1
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
OE
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR2.eps
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the
CE
and
WE
inputs and at least one of
the
LB
and
UB
inputs being in the LOW state.
2. WRITE = (
CE
)
[
(
LB
) = (
UB
)
]
(
WE
).
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB
,
LB
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR1.eps
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64LV25616AL-12TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲器 4Mb 256Kx16 10ns Async 靜態(tài)隨機(jī)存取存儲器 3.3v RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64LV25616AL-12TLA3TRU967A | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64LV51216 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV51216-12TA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64LV51216-12TLA3 | 制造商:Integrated Silicon Solution Inc 功能描述:IC SRAM 8MBIT 12NS 44TSOP |
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