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參數(shù)資料
| 型號(hào)： | IS64LV6416L |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| 中文描述： | 64K的× 16 HIGH-SPEED的CMOS靜態(tài)RAM為3.3V電源 |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大小： | 94K |
| 代理商： | IS64LV6416L |
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IS64LV6416L
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/03
11
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2
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10
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12
ISSI
DATA RETENTION WAVEFORM
(
CE
Controlled)
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
V
DR
I
DR
Parameter
V
DD
for Data Retention
Test Condition
See Data Retention Waveform
V
DD
= 2.0V,
CE
≥
V
DD
– 0.2V
Options
Min.
2.0
Typ.
(1)
—
Max.
3.6
Unit
V
Data Retention Current
A1
A2
A3
—
—
—
0.5
—
—
2
3
5
mA
t
SDR
t
RDR
Data Retention Setup Time
See Data Retention Waveform
0
—
—
ns
Recovery Time
See Data Retention Waveform
t
RC
—
—
ns
Note 1
:
Typical values are measured at V
DD
= 3.0V, T
A
= 25
O
C and not 100% tested.
V
DD
CE
≥
V
DD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
Data Retention Mode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS64LV6416L-10BA1 | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-10TA1 | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-12BA2 | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-12BA3 | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-12TA2 | 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64LV6416L-10BA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-10TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-12BA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY |
| IS64LV6416L-12BA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64LV6416L-12BA3-TR | 制造商:Integrated Silicon Solution Inc 功能描述: |
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