參數(shù)資料
型號(hào): IS64VPS25618A-200TQA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
中文描述: 256K X 18 CACHE SRAM, 3.1 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 12/26頁(yè)
文件大小: 174K
代理商: IS64VPS25618A-200TQA3
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
10/07/04
ISSI
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
OPERATING RANGE (IS61/64LPSXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
3.3V + 5%
3.3V / 2.5V + 5%
Industrial
–40°C to +85°C
3.3V + 5%
3.3V / 2.5V + 5%
Automotive
–40°C to +125°C
3.3V + 5%
3.3V / 2.5V + 5%
OPERATING RANGE (IS61/64VPSXXXXX)
Range
Commercial
Ambient Temperature
0°C to +70°C
V
DD
V
DDQ
2.5V + 5%
2.5V + 5%
Industrial
–40°C to +85°C
2.5V + 5%
2.5V + 5%
Automotive
–40°C to +125°C
2.5V + 5%
2.5V + 5%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
3.3V
Min.
2.5V
Min.
Symbol
Parameter
Test Conditions
Max.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= –4.0 mA (3.3V)
I
OH
= –1.0 mA (2.5V)
2.4
2.0
V
V
OL
Output LOW Voltage
I
OL
= 8.0 mA (3.3V)
I
OL
= 1.0 mA (2.5V)
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
V
DD
+ 0.3
1.7
V
DD
+ 0.3
V
V
IL
Input LOW Voltage
-0.3
0.8
-0.3
0.7
V
I
LI
Input Leakage Current
Output Leakage Current Vss
V
OUT
V
DDQ
,
Vss
V
IN
V
DD
(1)
-5
5
-5
5
μA
I
LO
-5
5
-5
5
μA
OE
= V
IH
相關(guān)PDF資料
PDF描述
IS61LPS25636A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200B2 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200B2I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200B3 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
IS61LPS25636A-200B3I 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS64WV102416BLL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
IS64WV102416BLL-10CTLA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL10CTLA3TR 制造商:Integrated Silicon Solution Inc 功能描述:16MB,HIGH-SPEED-AUTOMOTIVE,ASY
IS64WV102416BLL-10CTLA3-TR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
IS64WV102416BLL-10MA3 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 10ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray