- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377574 > IS64WV12816BLL-15TLA3 (INTEGRATED SILICON SOLUTION INC) 128K x 16 HIGH-SPEED CMOS STATIC RAM PDF資料下載
參數(shù)資料
| 型號： | IS64WV12816BLL-15TLA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | LEAD FREE, PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 126K |
| 代理商： | IS64WV12816BLL-15TLA3 |
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
ISSI
IS61WV12816BLL
IS64WV12816BLL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-12 ns
Min.
-15 ns
Min.
Symbol
t
WC
t
SCE
t
AW
Parameter
Max.
Max.
Unit
Write Cycle Time
12
—
15
—
ns
CE
to Write End
8
—
10
—
ns
Address Setup Time
to Write End
8
—
10
—
ns
t
HA
t
SA
t
PBW
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(3)
t
LZWE
(3)
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
LB
,
UB
Valid to End of Write
9
—
10
—
ns
WE
Pulse Width (
OE
= HIGH)
8
—
10
—
ns
WE
Pulse Width (
OE
= LOW)
10
—
12
—
ns
Data Setup to Write End
6
—
7
—
ns
Data Hold from Write End
0
—
0
—
ns
WE
LOW to High-Z Output
—
5
—
7
ns
WE
HIGH to Low-Z Output
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB
, and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced
to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
相關PDF資料 |
PDF描述 |
|---|---|
| IS64WV20488BLL | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64WV20488BLL-10MA3 | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64WV20488BLL-10TA3 | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64WV3216BLL | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV3216BLL-15BA3 | 32K x 16 HIGH-SPEED CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS64WV12816BLL-15TLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 15ns 2.5V-3.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV12816DBLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV12816DBLL/DBLS | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV12816DBLL-12BA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| IS64WV12816DBLL-12BLA3 | 功能描述:靜態(tài)隨機存取存儲器 2Mb, 128Kx16, 8ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復。