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參數(shù)資料
| 型號： | IS64WV12816BLL |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| 中文描述： | 128K的× 16 HIGH-SPEED的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/15頁 |
| 文件大?。?/td> | 126K |
| 代理商： | IS64WV12816BLL |
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
1
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS61WV12816BLL
IS64WV12816BLL
FEATURES
High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
Operating Current: 25mA (typ.)
Stand by Current: 400μA(typ.)
TTL and CMOS compatible interface levels
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperatures avail-
able
Lead-free available
128K x 16 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The
ISSI
IS61WV12816BLL and IS64WV12816BLL are
high-speed, 2,097,152-bit static RAM organized as 131,072
words by 16 bits. They are fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
access times as fast as 12 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS61WV12816BLL and IS64WV12816BLL are packaged
in the JEDEC standard 44-pin TSOP (Type II) and 48-pin
mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
FEBRUARY 2006
A0-A16
CE
OE
WE
UB
LB
128Kx16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS64WV12816BLL-15BA3 | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV12816BLL-15TA3 | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV12816BLL-15TLA3 | 128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV20488BLL | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
| IS64WV20488BLL-10MA3 | 2M x 8 HIGH-SPEED CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS64WV12816BLL-15BA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH-SPEED CMOS STATIC RAM |
| IS64WV12816BLL-15TA3 | 制造商:Integrated Silicon Solution Inc 功能描述: |
| IS64WV12816BLL-15TLA3 | 制造商:Integrated Silicon Solution Inc 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 44-Pin TSOP-II |
| IS64WV12816BLL-15TLA3-TR | 功能描述:靜態(tài)隨機存取存儲器 2Mb 128Kx16 15ns 2.5V-3.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS64WV12816DBLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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