參數(shù)資料
型號: IS64WV3216BLL-15BLA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 32K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 32K X 16 STANDARD SRAM, 15 ns, PBGA48
封裝: 6 X 8 MM, LEAD FREE, MINI, BGA-48
文件頁數(shù): 5/16頁
文件大小: 104K
代理商: IS64WV3216BLL-15BLA3
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
09/26/05
5
ISSI
IS64WV3216BLL
IS61WV3216BLL
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 ns
Options
-15 ns
Min.
Symbol
Parameter
Test Conditions
Min.
Max.
Max.
Unit
I
CC
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
COM
.
IND
.
AUTO
typ.
(2)
35
45
60
20
30
40
50
20
mA
I
CC
1
Operating Supply
Current
V
DD
= Max.,
Iout = 0mA, f = 0
COM
.
IND
.
AUTO
5
5
5
5
5
5
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
COM
.
IND
.
AUTO
typ.
(2)
20
50
75
6
20
50
75
6
uA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=2.5V, T
A
=25
o
C. Not 100% tested.
相關(guān)PDF資料
PDF描述
IS64WV3216BLL-15TA3 32K x 16 HIGH-SPEED CMOS STATIC RAM
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