參數(shù)資料
型號(hào): IS64WV6416BLL
廠商: Integrated Silicon Solution, Inc.
英文描述: 64K x 16 HIGH-SPEED CMOS STATIC RAM
中文描述: 64K的× 16 HIGH-SPEED的CMOS靜態(tài)RAM
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 104K
代理商: IS64WV6416BLL
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
11/08/05
ISSI
IS64WV6416BLL
IS61WV6416BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –1.0 mA
2.3
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 1.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2.0
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
DD
= Min., I
OH
= –4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
DD
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
Input LOW Voltage
(1)
2
V
DD
+ 0.3
V
V
IL
–0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
相關(guān)PDF資料
PDF描述
IS64WV6416BLL-15BA3 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416BLL-15BLA3 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416BLL-15TA3 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV6416BLL-15TLA3 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
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IS64WV6416BLL-15BA3TR/U975A 制造商:Integrated Silicon Solution Inc 功能描述:
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