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參數(shù)資料
| 型號(hào)： | IS65C256AL-25TA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32K x 8 LOW POWER CMOS STATIC RAM |
| 中文描述： | 32K X 8 STANDARD SRAM, 25 ns, PDSO28 |
| 封裝： | PLASTIC, TSOP1-28 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | IS65C256AL-25TA3 |
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
03/17/06
1
ISSI
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
IS65C256AL
IS62C256AL
FEATURES
Access time: 25 ns, 45 ns
Low active power: 200 mW (typical)
Low standby power
— 150 μW (typical) CMOS standby
— 15 mW (typical) operating
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 5V power supply
Lead-free available
Industrial and Automotive temperatures avail-
able
DESCRIPTION
The
ISSI
IS62C256AL/IS65C256AL is a low power,
32,768 word by 8-bit CMOS static RAM. It is fabricated
using
ISSI
's high-performance, low power CMOS tech-
nology.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 μW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Select (
CE
) input and an active LOW Output
Enable (
OE
) input. The active LOW Write Enable (
WE
)
controls both writing and reading of the memory.
The IS62C256AL/IS65C256AL is pin compatible with
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)
package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
CE
OE
WE
32K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
32K x 8 LOW POWER CMOS STATIC RAM
MARCH 2006
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS65C256AL-25TLA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25UA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25ULA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-45TA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-45TLA3 | 32K x 8 LOW POWER CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65C256AL-25TLA3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K (32Kx8) 25ns 5V Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C256AL-25TLA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K (32Kx8) 25ns 5V Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C256AL-25UA3 | 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:32K x 8 LOW POWER CMOS STATIC RAM |
| IS65C256AL-25ULA3 | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 25ns 5V Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS65C256AL-25ULA3-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 256K 32Kx8 25ns 5V Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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