參數(shù)資料
型號(hào): IS65C256AL-45TA3
廠商: INTEGRATED SILICON SOLUTION INC
元件分類(lèi): DRAM
英文描述: 32K x 8 LOW POWER CMOS STATIC RAM
中文描述: 32K X 8 STANDARD SRAM, 45 ns, PDSO28
封裝: PLASTIC, TSOP1-28
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 101K
代理商: IS65C256AL-45TA3
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06
ISSI
IS65C256AL
IS62C256AL
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-25 ns
Min.
15
5
-45 ns
Min.
12
5
Symbol
I
CC
1
Parameter
V
DD
Operating
Supply Current
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
Max.
15
20
25
25
30
35
Max.
15
20
25
20
25
30
Unit
mA
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
I
CC
2
V
DD
Dynamic Operating
Supply Current
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
V
DD
= Max.,
CE
V
DD
– 0.2V,
V
IN
V
DD
– 0.2V, or
V
IN
0.2V, f = 0
100
120
150
15
20
50
100
120
150
15
20
50
μA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5.0V, T
A
= 25
o
C and not 100% tested.
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