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| 型號： | IS65WV25616ALL-70TA3 |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 70 ns, PDSO44 |
| 封裝： | PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 109K |
| 代理商： | IS65WV25616ALL-70TA3 |
IS65WV25616ALL, IS65WV25616BLL
ISSI
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00B
06/20/06
3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
V
DD
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
I
OH
= -1 mA
1.65-2.2V
2.5-3.6V
1.4
2.2
—
—
V
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
I
OL
= 2.1 mA
1.65-2.2V
2.5-3.6V
—
—
0.2
0.4
V
V
V
IH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
1.4
2.2
V
DD
+ 0.2
V
DD
+ 0.3
V
V
V
IL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
–0.2
–0.2
0.4
0.6
V
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–2
2
μA
I
LO
Output Leakage
–2
2
μA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
OPERATING RANGE (V
DD
)
Range
A1
A2
Ambient Temperature
-40°C to +85°C
–40°C to +105°C
IS65WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
IS65WV25616BLL
2.5V-3.6V
2.5V-3.6V
A3
–40°C to +125°C
1.65V - 2.2V
2.5V-3.6V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
V
°C
W
–0.2 to V
DD
+0.3
–0.2 to V
DD
+0.3
–65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
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| IS65WV25616BLL | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-55TA1 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-55TLA1 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA2 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA3 | 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS65WV25616BLL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-55TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-55TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA2 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
| IS65WV25616BLL-70TA3 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM |
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