參數(shù)資料
型號(hào): IS93C66-3
廠商: Integrated Silicon Solution, Inc.
英文描述: 4,096-Bit Serial EEPROM(4KB串行EEPROM)
中文描述: 4,096位串行EEPROM(4KB的串行EEPROM中)
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 91K
代理商: IS93C66-3
ISSI
IS93C66-3
4-4
Integrated Silicon Solution, Inc.
EE002-1F
04/24/97
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
GND
T
BIAS
T
BIAS
T
STG
Parameter
Voltage with Respect to GND
Temperature Under Bias (IS93C46-3)
Temperature Under Bias (IS93C46-3I)
Storage Temperature
Value
–0.3 tp +6.5
0 to +70
–40 to +85
–65 to +125
Unit
V
°
C
°
C
°
C
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
CAPACITANCE
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
V
CC
2.7V to 6.0V
2.7V to 6.0V
FIGURE 1. AC TEST CONDITIONS
800
100 pF
+2.08V
D
OUT
Vcc = 5.0V
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