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| 型號： | ISL12022IBZ |
| 廠商： | Intersil |
| 文件頁數(shù)： | 26/29頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC/CALENDAR TEMP SNSR 8-SOIC |
| 應(yīng)用說明： | Addressing Power Issues in Real Time Clock Appls |
| 產(chǎn)品培訓(xùn)模塊： | Solutions for Industrial Control Applications |
| 標(biāo)準(zhǔn)包裝： | 98 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，夏令時(shí)，閏年，SRAM |
| 存儲容量： | 128B |
| 時(shí)間格式： | HH:MM:SS（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線串口 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 電壓 - 電源，電池： | 1.8 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOIC |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁面： | 1245 (CN2011-ZH PDF) |
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ISL12022
6
FN6659.3
November 22, 2011
tR
SDA and SCL Rise Time
From 30% to 70% of VDD.
20 + 0.1 x Cb
300
ns
tF
SDA and SCL Fall Time
From 70% to 30% of VDD.
20 + 0.1 x Cb
300
ns
Cb
Capacitive Loading of SDA or SCL
Total on-chip and off-chip
10
400
pF
RPU
SDA and SCL Bus Pull-up Resistor
Off-chip
Maximum is determined by tR
and tF.
For Cb = 400pF, max is about
2k~2.5k.
For Cb = 40pF, max is about
15k~20k
1
k
NOTES:
6. Temperature Conversion is inactive below VBAT = 2.7V. Device operation is not guaranteed at VBAT <1.8V.
7. IRQ/FOUT inactive.
8. VDD > VBAT +VBATHYS.
9. Specified at +25°C.
10. In order to ensure proper timekeeping, the VDD SR- specification must be followed.
11. Limits should be considered typical and are not production tested.
12. These are I2C specific parameters and are not tested, however, they are used to set conditions for testing devices to validate specification.
13. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
14. Specifications are typical and require using a recommended crystal (see “Application Section” on page 25).
15. Minimum VDD and/or VBAT of 1V to sustain the SRAM. The value is based on characterization and it is not tested.
16. To avoid EEPROM recall issues, it is advised to use this minimum power up slew rate. Not tested, shown as typical only.
I2C Interface Specifications Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise specified.
Boldface limits apply over the operating temperature range, -40°C to +85°C (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
(Note 13)
TYP
(Note 9)
MAX
(Note 13)
UNITS
NOTES
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相關(guān)代理商/技術(shù)參數(shù) |
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| ISL12022IBZ-T | 功能描述:實(shí)時(shí)時(shí)鐘 REAL TIME CLK/CLNDR W/TEMP COMP 8 L RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| ISL12022IBZ-T7A | 功能描述:實(shí)時(shí)時(shí)鐘 REAL TIME CLK/CLNDR W/TEMP COMP 8 L RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時(shí)間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| ISL12022M | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation, and Auto Daylight Saving |
| ISL12022M_09 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM, Integrated ±5ppm Temperature Compensation, and Auto Daylight Saving |
| ISL12022M_10 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Low Power RTC with Battery Backed SRAM,Integrated ±5ppm Temperature Compensation and Auto Daylight Saving |
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