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參數(shù)資料
| 型號： | ISL1208IU8 |
| 廠商： | Intersil |
| 文件頁數(shù)： | 19/24頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC LP BATT BACKED SRAM 8MSOP |
| 標(biāo)準(zhǔn)包裝： | 80 |
| 類型： | 時(shí)鐘/日歷 |
| 特點(diǎn)： | 警報(bào)器，閏年，SRAM |
| 存儲容量： | 2B |
| 時(shí)間格式： | HH:MM:SS（12/24 小時(shí)） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線串口 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 電壓 - 電源，電池： | 1.8 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-MSOP |
| 包裝： | 管件 |
4
FN8085.8
September 12, 2008
Absolute Maximum Ratings
Thermal Information
(respect to GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V
Voltage on X1 and X2 Pins
(respect to GND) . . . . . . . . . . . . . -0.5V to VDD + 0.5 (VDD Mode)
-0.5V to VBAT + 0.5 (VBAT Mode)
Latchup (Note 4) ................Class II, Level B @ +85°C
Thermal Resistance (Typical, Note 1)
θJA (°C/W) θJC (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . .
95
N/A
MSOP Package . . . . . . . . . . . . . . . . . .
128
N/A
TDFN Package (Note 2). . . . . . . . . . . .
53.7
2.8
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. For
θ
JC, the “case temp” location is the center of the exposed metal pad on the package underside.
3. The VDD and SDA pins should not be subjected to negative voltage while the VBAT pin is biased, otherwise latchup can result. See the
Applications section.
4. Jedec Class II pulse conditions and failure criterion used. Level B exceptions are using a negative pulse limited to -0.5V.
DC Operating Characteristics – RTC Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
(Note 9)
TYP
(Note 8)
MAX
(Note 9)
UNITS
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
IDD1
Supply Current
VDD = 5V
2
6
A
VDD = 3V
1.2
4
A
IDD2
Supply Current With I2C Active
VDD = 5V
40
120
A
IDD3
Supply Current (Low Power Mode)
VDD = 5V, LPMODE = 1
1.4
5
A
IBAT
Battery Supply Current
VBAT = 3V
400
950
nA
ILI
Input Leakage Current on SCL
100
nA
ILO
I/O Leakage Current on SDA
100
nA
VTRIP
VBAT Mode Threshold
1.6
2.2
2.6
V
VTRIPHYS
VTRIP Hysteresis
10
30
75
mV
VBATHYS
VBAT Hysteresis
15
50
100
mV
IRQ/FOUT
VOL
Output Low Voltage
VDD = 5V
IOL = 3mA
0.4
V
VDD = 2.7V
IOL = 1mA
0.4
V
Power-Down Timing Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
NOTES
MIN
(Note 9)
TYP
(Note 8)
MAX
(Note 9)
UNITS
VDD SR-
VDD Negative Slewrate
10
V/ms
Serial Interface Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NOTES
MIN
(Note 9)
TYP
(Note 8)
MAX
(Note 9)
UNITS
SERIAL INTERFACE SPECS
VIL
SDA and SCL Input Buffer LOW
Voltage
-0.3
0.3 x
VDD
V
ISL1208
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