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參數(shù)資料
| 型號： | ISL1218IUZ-T |
| 廠商： | Intersil |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC RTC LP BATT BACKED SRAM 8MSOP |
| 產(chǎn)品培訓(xùn)模塊： | Solutions for Industrial Control Applications |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 類型： | 時鐘/日歷 |
| 特點： | 警報器，閏年，SRAM |
| 存儲容量： | 8B |
| 時間格式： | HH:MM:SS（12/24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線串口 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 電壓 - 電源，電池： | 1.8 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-TSSOP，8-MSOP（0.118"，3.00mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-MSOP |
| 包裝： | 帶卷 (TR) |
3
FN6313.0
June 22, 2006
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT Pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7.0V
Voltage on X1 and X2 Pins
(respect to ground) . . . . . . . . . . . . -0.5V to VDD + 0.5 (VDD Mode)
-0.5V to VBAT + 0.5 (VBAT Mode)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . 300°C
ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . .>2kV
ESD Rating (Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . .>175V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
8 Ld MSOP Package . . . . . . . . . . . . . . . . . . . . . . . .
130
8 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . .
110
Moisture Sensitivity for MSOP Package
(see Technical Brief TB363). . . . . . . . . . . . . . . . . . . . . . . . Level 2
Moisture Sensitivity for SOIC Package
(see Technical Brief TB363). . . . . . . . . . . . . . . . . . . . . . . . Level 1
Maximum Junction Temperature (Plastic Package). . . . . . . . . 150°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
DC Operating Characteristics – RTC Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
VDD
Main Power Supply
2.7
5.5
V
VBAT
Battery Supply Voltage
1.8
5.5
V
IDD1
Supply Current
VDD = 5V
2
6
A
VDD = 3V
1.2
4
A
IDD2
Supply Current With I2C Active
VDD = 5V
40
120
A
IDD3
Supply Current (Low Power Mode)
VDD = 5V, LPMODE = 1
1.4
5
A
IBAT
Battery Supply Current
VBAT = 3V
400
950
nA
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
100
nA
ILO
I/O Leakage Current on SDA
100
nA
VTRIP
VBAT Mode Threshold
1.6
2.2
2.64
V
VTRIPHYS
VTRIP Hysteresis
10
35
60
mV
VBATHYS
VBAT Hysteresis
10
50
100
mV
IRQ/FOUT
VOL
Output Low Voltage
VDD = 5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
ILO
Output Leakage Current
VDD = 5.5V
VOUT = 5.5V
100
400
nA
Power-Down Timing Temperature = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
VDD SR-
VDD Negative Slewrate
10
V/ms
Serial Interface Specifications
Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(Note 5)
MAX
UNITS
NOTES
SERIAL INTERFACE SPECS
VIL
SDA and SCL Input Buffer LOW
Voltage
-0.3
0.3 x
VDD
V
VIH
SDA and SCL Input Buffer HIGH
Voltage
0.7 x
VDD
VDD +
0.3
V
ISL1218
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