4
FN6331.3
May 28, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 10k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
2.5
mA
VCC Supply Current (volatile
write/read, non-volatile read)
VCC = +3.6V, 50k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
0.65
mA
ICC2
VCC Supply Current (non-volatile
write/read)
VCC = +5.5V, 10k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
4.0
mA
VCC Supply Current (non-volatile
write/read)
VCC = +5.5V, 50k DCP, fSCL = 400kHz; (for
I2C active, read and write states)
3.0
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, I
2C interface in
standby state
2.4
mA
VCC = +3.6V, 10k DCP, I
2C interface in
standby state
525
A
VCC = +5.5V, 50k DCP, I
2C interface in
standby state
1.6
mA
VCC = +3.6V, 50k DCP, I
2C interface in
standby state
350
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, I
2C interface in
standby state
5A
VCC = +5.5V @ +125°C, I
2C interface in
standby state
6.5
A
VCC = +3.6V @ +85°C, I
2C interface in
standby state
4A
VCC = +3.6V @ +125°C, I
2C interface in
standby state
5.5
A
ILkgDig
Leakage Current, at Pins A0, A1, A2,
SHDN, SDA, and SCL
Voltage at pin from GND to VCC
-1
1
A
tWRT
DCP Wiper Response Time
SCL falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
DCP Recall Time from Shutdown
Mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCL falling edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on Recall Voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VccRamp
VCC Ramp Rate
0.2
V/ms
tD
Power-up Delay
Vcc above Vpor, to DCP Initial Value
Register recall completed, and I2C Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T < +55°C
50
Years
tWC
Non-volatile Write Cycle Time
12
20
ms
ISL22349