IV-SB V- Current (standby) V- = -5.5V, V
參數(shù)資料
型號： ISL22444TFV20Z
廠商： Intersil
文件頁數(shù)： 16/19頁
文件大?。?/td> 0K
描述： IC POT DGTL 256TP LN LP 20-TSSOP
產(chǎn)品培訓(xùn)模塊： Solutions for Industrial Control Applications
標(biāo)準(zhǔn)包裝： 740
系列： XDCP™
接片： 256
電阻（歐姆）： 100k
電路數(shù)： 4
溫度系數(shù)： 標(biāo)準(zhǔn)值 ±45 ppm/°C
存儲器類型： 非易失
接口： 4 線 SPI（芯片選擇）
電源電壓： 2.25 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 20-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝： 20-TSSOP
包裝： 管件
6
FN6426.0
May 24, 2007
IV-SB
V- Current (standby)
V- = -5.5V, VCC = +5.5V @ +85°C, SPI interface
in standby state
-4.0
-0.7
A
V- = -5.5V, VCC = +5.5V @ +125°C, SPI interface
in standby state
-5.0
-1.5
A
V- = -2.25V, VCC = +2.25V @ +85°C, SPI
interface in standby state
-2.0
-0.3
A
V- = -2.25V, VCC = +2.25V @ +125°C, SPI
interface in standby state
-3.0
-0.4
A
ISD
VCC Current (shutdown)
VCC = +5.5V, V- = -5.5V @ +85°C, SPI interface
in standby state
0.5
2.0
A
VCC = +5.5V, V- = -5.5V @ +125°C, SPI interface
in standby state
1.0
4.0
A
VCC = +2.25V, V- = -2.25V @ +85°C, SPI
interface in standby state
0.2
1.0
A
VCC = +2.25V, V- = -2.25V @ +125°C, SPI
interface in standby state
0.5
2.0
A
IV-SD
V- Current (shutdown)
V- = -5.5V, VCC = +5.5V @ +85°C, SPI interface
in standby state
-4.0
-0.7
A
V- = -5.5V, VCC = +5.5V @ +125°C, SPI interface
in standby state
-5.0
-1.5
A
V- = -2.25V, VCC = +2.25V @ +85°C, SPI
interface in standby state
-2.0
-0.3
A
V- = -2.25V, VCC = +2.25V @ +125°C, SPI
interface in standby state
-3.0
-0.4
A
ILkgDig
Leakage current, at pins SCK, SDI,
SDO and CS
Voltage at pin from GND to VCC
-1
1
A
tWRT
(Note 20)
DCP wiper response time
CS rising edge to wiper new position
1.5
s
tShdnRec
(Note 20)
DCP recall time from shutdown
mode
CS rising edge to wiper stored position and RH
connection
1.5
s
Vpor
Power-on recall voltage
Minimum VCC at which memory recall occurs
1.9
2.1
V
VCCRamp VCC ramp rate
0.2
V/ms
tD
Power-up delay
VCC above Vpor, to DCP Initial Value Register
recall completed, and SPI Interface in standby
state
5ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature T
≤ +55C
50
Years
tWC
(Note 18)
Non-volatile Write Cycle time
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
VIL
SCK, SDI, and CS input buffer
LOW voltage
0.3*VCC
V
VIH
SCK, SDI, and CS input buffer
HIGH voltage
0.7*VCC
V
Hysteresis
SCK, SDI, and CS input buffer
hysteresis
0.05*VCC
V
VOL
SDO output buffer LOW voltage
IOL = 4mA for Open Drain output, pull-up voltage
Vpu = VCC
00.4
V
Rpu
(Note 19)
SDO pull-up resistor off-chip
Maximum is determined by tRO and tFO with
maximum bus load Cb = 30pF, fSCK = 5MHz
2k
Ω
Operating Specifications Over the recommended operating conditions unless otherwise specified. (Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(NOTE 4)
MAX
UNIT
ISL22444
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