Operating Specifications Over the recommended operating conditions unless otherwise s" />
參數(shù)資料
型號(hào)： ISL22449UFV14Z
廠商： Intersil
文件頁數(shù)： 8/13頁
文件大?。?/td> 0K
描述： IC POT DGTL 128TP LN LP 14-TSSOP
標(biāo)準(zhǔn)包裝： 96
系列： XDCP™
接片： 128
電阻（歐姆）： 50k
電路數(shù)： 4
溫度系數(shù)： 標(biāo)準(zhǔn)值 ±80 ppm/°C
存儲(chǔ)器類型： 非易失
接口： 4 線 SPI（芯片選擇）
電源電壓： 2.7 V ~ 5.5 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 14-TSSOP（0.173"，4.40mm 寬）
供應(yīng)商設(shè)備封裝： 14-TSSOP
包裝： 管件
4
FN6333.3
July 17, 2009
Operating Specifications Over the recommended operating conditions unless otherwise specified. Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
(Note 3)
MAX
UNIT
ICC1
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
2.5
mA
VCC Supply Current (volatile
write/read)
VCC = +3.6V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
0.65
mA
ICC2
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 10k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
4.0
mA
VCC Supply Current ( non-volatile
write/read)
VCC = +5.5V, 50k DCP, fSPI = 5MHz; (for SPI
active, read and write states)
3.0
mA
ISB
VCC Current (standby)
VCC = +5.5V, 10k DCP, SPI interface in
standby state
2.4
mA
VCC = +5.5V, 50k DCP, SPI interface in
standby state
525
A
VCC = +3.6V, 10k DCP, SPI interface in
standby state
1.6
mA
VCC = +3.6V, 50k DCP, SPI interface in
standby state
350
A
ISD
VCC Current (shutdown)
VCC = +5.5V @ +85°C, SPI interface in
standby state
5A
VCC = +5.5V@ +125°C, SPI interface in
standby state
6.5
A
VCC = +3.6V @ +85°C, SPI interface in
standby state
4A
VCC = +3.6V @ +125°C, SPI interface in
standby state
5.5
A
ILkgDig
Leakage current, at pins SHDN, SCK,
SDI, SDO and CS
Voltage at pin from GND to VCC
-1
1
A
tWRT
(Note 13)
DCP wiper response time
SCK falling edge of last bit of DCP data byte
to wiper new position
1.5
s
tShdnRec
(Note 13)
DCP recall time from shutdown mode
From rising edge of SHDN signal to wiper
stored position and RH connection
1.5
s
SCK rising edge of last bit of ACR data byte
to wiper stored position and RH connection
1.5
s
Vpor
Power-on recall voltage
Minimum VCC at which memory recall occurs
2.0
2.6
V
VccRamp
Vcc ramp rate
0.2
V/ms
tD
Power-up delay
VCC above Vpor, to DCP Initial Value
Register recall completed, and SPI Interface
in standby state
3ms
EEPROM SPECIFICATION
EEPROM Endurance
1,000,000
Cycles
EEPROM Retention
Temperature
T < +55°C
50
Years
tWC
(Note 11)
Non-volatile Write cycle time
12
20
ms
SERIAL INTERFACE SPECIFICATIONS
VIL
SHDN, SCK, SDI, and CS input buffer
LOW voltage
-0.3
0.3*VCC
V
ISL22449
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