參數(shù)資料
型號(hào): ISL43210IH-T
廠商: Intersil
文件頁(yè)數(shù): 12/12頁(yè)
文件大?。?/td> 0K
描述: IC SWITCH SPDT SOT23-6
標(biāo)準(zhǔn)包裝: 1
功能: 開(kāi)關(guān)
電路: 1 x SPDT
導(dǎo)通狀態(tài)電阻: 20 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 12 V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: SOT-23-6
供應(yīng)商設(shè)備封裝: SOT-23-6
包裝: 標(biāo)準(zhǔn)包裝
其它名稱(chēng): ISL43210IH-DKR
ISL43210IH-DKR-ND
ISL43210IHDKR
9
FN6563.2
October 30, 2007
these diodes conducts if any analog signal exceeds V+ or
GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the
analog-signal-path leakage current. All analog leakage
current flows between each pin and one of the supply
terminals, not to the other switch terminal. This is why both
sides of a given switch can show leakage currents of the
same or opposite polarity. There is no connection between
the analog signal paths and V+ or GND.
Typical Performance Curves TA = +25°C, Unless Otherwise Specified.
FIGURE 9. ON-RESISTANCE vs SUPPLY VOLTAGE
FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 11. rON MATCH vs SWITCH VOLTAGE
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
r ON
(
Ω
)
V+ (V)
35
25
15
5
3
4
5
6
7
8
9
10
11
12
13
+25°C
-40°C
+85°C
10
20
30
40
r ON
(
Ω
)
VCOM (V)
15
5
0
4
6
8
10
12
10
20
2
20
15
25
10
25
20
30
15
40
45
V+ = 3.3V
V+ = 5V
V+ = 12V
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
30
35
-40°C
Δ
r ON
(
Ω
)
VCOM (V)
0.10
0
4
6
8
10
12
0.05
0.15
2
V+ = 3.3V
V+ = 5V
V+ = 12V
+25°C
-40°C
+85°C
0.10
0.05
0.15
0
0.20
0.25
+25°C
-40°C
+85°C
0.20
0.10
0.30
0
0.40
0.50
+25°C
-40°C
+85°C
+25°C
Q
(p
C)
VCOM (V)
60
40
20
0
-20
0
468
10
12
-10
10
30
50
V+ = 3.3V
2
V+ = 5V
V+ = 12V
ISL43210
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