參數(shù)資料
型號(hào): ISL6144IV
廠商: INTERSIL CORP
元件分類(lèi): MOSFETs
英文描述: High Voltage ORing MOSFET Controller
中文描述: 2 A BUF OR INV BASED MOSFET DRIVER, PDSO16
封裝: PLASTIC, MO-153AB, TSSOP-16
文件頁(yè)數(shù): 14/14頁(yè)
文件大?。?/td> 404K
代理商: ISL6144IV
9
MOSFET M2 or ORing Diode D2 will be conducting the full
load current. Power loss across the ORing devices is:
This shows that worst-case failure scenario has to be
accounted for when choosing the ORing MOSFET. In this
case we need to use two MOSFETs in parallel per feed to
reduce overall power dissipation and prevent excessive
temperature rise of any single MOSFET. Another alternative
would be to choose a MOSFET with lower rDS(ON).
The final choice of the N-Channel ORing MOSFET depends
on the following aspects:
1. Voltage Rating: The drain-source breakdown voltage
VDSS has to be higher than the maximum input voltage
including transients and spikes. Also the gate to source
voltage rating has to be considered, The ISL6144
maximum Gate charge voltage is 12V, make sure the
used MOSFET has a maximum VGS rating >12V.
2. Power Losses: In this application the ORing MOSFET is
used as a series pass element, which is normally fully
enhanced at high load currents, switching losses are
negligible. The major losses are conduction losses, which
depend on the value of the on-state resistance of the
MOSFET rDS(ON), and the per feed load current. For an
N+1 redundant system with perfect current sharing, the
per feed MOSFET losses are:
The rDS(ON) value also depends on junction temperature;
a curve showing this relationship is usually part of any
MOSFET’s data sheet. The increase in the value of the
rDS(ON) over temperature has to be taken into account.
3. Current handling capability, steady state and peak, are
also two important parameters that must be considered.
The limitation on the maximum allowable drain current
comes from limitation on the maximum allowable device
junction temperature. The thermal board design has to be
able to dissipate the resulting heat without exceeding the
MOSFET’s allowable junction temperature.
Another important consideration when choosing the ORing
MOSFET is the forward voltage drop across it, if this drop
approaches the 0.41V limit, which is used in the VOUT fault
monitoring mechanism then this will result in a permanent
fault indication. Normally the voltage drop would be chosen
not to exceed a value around 100mV.
“ISL6144+ORing FET” vs “ORing Diode” Solution
“ISL6144+ORing FET“ solution is more efficient, which will
result in simplified PCB and thermal design. It will also
eliminate the need for a heat sink for the ORing diode. This
will result in cost savings. In addition is the fact that the
ISL6144 solution provides a more flexible, reliable and
controllable ORing functionality and protecting against
system fault scenarios (refer to fault detection block
description).
On the other hand the most common failures caused by
diode ORing include open circuit and short circuit failures. If
one of these diodes (Feed A) has failed open, then the other
Feed B will provide all of the power demand. The system will
continue to operate without any notification of this failure
reducing the system to a single point of failure. A much more
dangerous failure is where the diode has failed short. The
system will continue to operate without notification that the
short has occurred. With this failure transients and failures
on Feed B propagate to Feed A. Also this silent short failure
could pose a significant safety hazard for technical
personnel servicing these feeds.
“ISL6144 + ORing FET” vs “Discrete ORing FET”
Solution
If we compare the ISL6144 integrated solution to discrete
ORing MOSFET solutions, the ISL6144 wins in all aspects,
the main ones being PCB real estate saving, cost savings,
and reduction in the MTBF of this section of the circuit as the
overall number of components is reduced.
In brief the solution offered by this IC enhances power
system performance and protection while not adding any
considerable cost, on the contrary saving PCB board real
estate and providing simple to implement integrated
solution.
Setting the External HS Comparator Threshold
Voltage
In general, paralleled modules in a redundant power system
have some form of active current sharing, to realize the full
benefit of this scheme including lower operating
temperatures, lower system failure rate, as well as better
transient response when load step is shared. Current
sharing is realized using different techniques; all of these
techniques will lead to similar modules operating under
similar conditions in terms of switching frequency, duty
cycle, output voltage and current. When paralleled modules
are current sharing, their individual output ripple will be
similar in amplitude and frequency and the common bus will
have the same ripple as these individual modules and will
not cause any of the turn off mechanisms to be activated as
the same ripple will be present on both sensing nodes (VIN
and VOUT). This would allow setting the high speed
comparator threshold (VTH(HS)) to a very low value. As a
starting point a VTH(HS) of 50mV could be used, the final
value of this TH will be system dependant and has to be
finalized in the system prototype stage. If the gate
experiences false turn-off due to system noise, the VTH(HS)
has to be increased.
P
loss D2
()
I
OUT
V
F
40A 0.5V
20W
==
=
P
loss M2
()
I
OUT
()
2
R
dson
40A
()
2
5m
8W
==
=
(EQ. 5)
P
loss FET
()
I
LOAD
N1
+
-----------------
2
r
DS ON
()
=
(EQ. 6)
ISL6144
相關(guān)PDF資料
PDF描述
ISL6144IVZA High Voltage ORing MOSFET Controller
ISL6410AIU-T Circular Connector; No. of Contacts:6; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:8-6 RoHS Compliant: No
ISL6410AIU-T5K Circular Connector; No. of Contacts:13; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:10-13 RoHS Compliant: No
ISL6410AIU-TK Circular Connector; No. of Contacts:13; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:10-13 RoHS Compliant: No
ISL6410AIUZ Single Synchronous Buck Regulators with Integrated FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL6144IV-T 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:否 類(lèi)別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份,工業(yè)/汽車(chē),大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:16-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
ISL6144IVZA 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份,工業(yè)/汽車(chē),大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:16-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
ISL6144IVZA-T 功能描述:IC CTRLR MOSFET HV ORING 16TSSOP RoHS:是 類(lèi)別:集成電路 (IC) >> PMIC - O 圈控制器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 應(yīng)用:電池備份,工業(yè)/汽車(chē),大電流開(kāi)關(guān) FET 型:- 輸出數(shù):5 內(nèi)部開(kāi)關(guān):是 延遲時(shí)間 - 開(kāi)啟:100ns 延遲時(shí)間 - 關(guān)閉:- 電源電壓:3 V ~ 5.5 V 電流 - 電源:250µA 工作溫度:0°C ~ 70°C 安裝類(lèi)型:表面貼裝 封裝/外殼:16-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC N 包裝:帶卷 (TR)
ISL6144IVZA-T7A 功能描述:熱插拔功率分布 W/ANNEAL 16LD TSSOP ORING FET CONTRLR RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
ISL6146 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:Low Voltage ORing FET Controller