參數(shù)資料
型號(hào)： ISL6251HRZ-T
廠商： INTERSIL CORP
元件分類： 電源管理
英文描述： Low Cost Multi-Chemistry Battery Charger Controller
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, PQCC28
封裝： LEAD FREE, 5 X 5 MM, PLASTIC, QFN-28
文件頁(yè)數(shù)： 3/20頁(yè)
文件大?。?/td> 593K
代理商： ISL6251HRZ-T
3
FN9202.1
June 17, 2005
Absolute Maximum Ratings
Thermal Information
DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . .-0.3V to +28V
CSIP-CSIN, CSOP-CSON. . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +35V
BOOT-PHASE, VDD-GND, VDDP-PGND,
ACPRN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to 7V
ACSET to GND (Note 3) . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
ACLIM, CHLIM, VREF, CELLS to GND. . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . .-0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Resistance
QFN Package (Notes 4, 6). . . . . . . . . .
QSOP Package (Note 5) . . . . . . . . . . .
ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 2
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . .+300°C
θ
JA
(°C/W)
θ
JC
(°C/W)
39
88
9.5
N/A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET is below 0V, the current through ACSET should be limited to less than 1mA.
4.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN=CSIP=CSIN=18V, CSOP=CSON=12V, ACSET=1.5V, ACLIM=VREF, VADJ=Floating, EN=VDD=5V,
BOOT-PHASE=5.0V, GND=PGND=0V, C
VDD
=1μF, I
VDD
=0mA, T
A
=-10°C to +100°C, T
J
≤
125°C, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN=VDD or GND, 7V
≤
DCIN
≤
25V
1.4
3
mA
Battery Leakage Current (Note 7)
DCIN=0, no load
3
10
μA
VDD Output Voltage/Regulation
7V
≤
DCIN
≤
25V, 0
≤
I
VDD
≤
30mA
4.925
5.075
5.225
V
VDD Undervoltage Lockout Trip Point
VDD Rising
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
Reference Output Voltage VREF
0
≤
I
VREF
≤
300μA
2.365
2.39
2.415
V
Battery Charge Voltage Accuracy
CSON=16.8V, CELLS=VDD, VADJ=Float
-0.5
0.5
%
CSON=12.6V, CELLS=GND, VADJ=Float
-0.5
0.5
%
CSON=8.4V, CELLS=Float, VADJ=Float
-0.5
0.5
%
CSON=17.64V, CELLS=VDD, VADJ=VREF
-0.5
0.5
%
CSON=13.23V, CELLS=GND, VADJ=VREF
-0.5
0.5
%
CSON=8.82V, CELLS=Float, VADJ=VREF
-0.5
0.5
%
CSON=15.96V, CELLS=VDD, VADJ=GND
-0.5
0.5
%
CSON=11.97V, CELLS=GND, VADJ=GND
-0.5
0.5
%
CSON=7.98V, CELLS=Float, VADJ=GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
1.24
1.26
1.28
V
ACSET Input Bias Current Hysteresis
2.2
3.4
4.4
μA
ACSET Input Bias Current
ACSET
≥
1.26V
2.2
3.4
4.4
μA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
μA
ISL6251, ISL6251A
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