參數(shù)資料
型號(hào): ISL6530CRZ
廠商: INTERSIL CORP
元件分類(lèi): 穩(wěn)壓器
英文描述: Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTT Termination
中文描述: DUAL SWITCHING CONTROLLER, 325 kHz SWITCHING FREQ-MAX, PQCC32
封裝: 5 X 5 MM, LEAD FREE, PLASTIC, MO-220-VHHD, MLFP-32
文件頁(yè)數(shù): 1/17頁(yè)
文件大?。?/td> 540K
代理商: ISL6530CRZ
1
ISL6530
Dual 5V Synchronous Buck Pulse-Width
Modulator (PWM) Controller for DDRAM
Memory V
DDQ
and V
TT
Termination
The ISL6530 provides complete control and protection for
dual DC-DC converters optimized for high-performance
DDRAM memory applications. It is designed to drive low
cost N-channel MOSFETs in synchronous-rectified buck
topology to efficiently generate 2.5V V
DDQ
for powering
DDRAM memory, V
REF
for DDRAM differential signalling,
and V
TT
for signal termination. The ISL6530 integrates all of
the control, output adjustment, monitoring and protection
functions into a single package.
The V
DDQ
output of the converter is maintained at 2.5V
through an integrated precision voltage reference. The V
REF
output is precisely regulated to 1/2 the memory power
supply, with a maximum tolerance of
±
1% over temperature
and line voltage variations. V
TT
accurately tracks V
REF
.
During V2_SD sleep mode, the V
TT
output is maintained by
a low power window regulator.
The ISL6530 provides simple, single feedback loop, voltage-
mode control with fast transient response. It includes two
phase-locked 300kHz triangle-wave oscillators which are
displaced 90
o
to minimize interference between the two
PWM regulators. The regulators feature error amplifiers with
a 15MHz gain-bandwidth product and 6V/
μ
s slew rate which
enables high converter bandwidth for fast transient
performance. The resulting PWM duty ratio ranges from 0%
to 100%.
The ISL6530 protects against over-current conditions by
inhibiting PWM operation. The ISL6530 monitors the current
in the V
DDQ
regulator by using the r
DS(ON)
of the upper
MOSFET which eliminates the need for a current sensing
resistor.
Ordering Information
Features
Provides V
DDQ
, V
REF
, and V
TT
voltages for one- and two-
channel DDRAM memory systems
Excellent voltage regulation
- V
DDQ
= 2.5V
±
2% over full operating range
- V
REF
= (V
DDQ
÷
2)
±
1% over full operating range
- V
TT
= V
REF
±
30mV
Supports ‘S3’ sleep mode
- V
TT
is held at V
DDQ
÷
2 via low power window regulator
to minimize wake-up time
Fast transient response
- Full 0% to 100% duty ratio
Operates from +5V input
Overcurrent fault monitor on VDD
- Does not require extra current sensing element
- Uses MOSFET’s r
DS(ON)
Drives inexpensive N-Channel MOSFETs
Small converter size
- 300kHz fixed frequency oscillator
24 Lead, SOIC or 32 Lead, 5mm
×
5mm QFN
Pb-Free Available (RoHS Compliant)
Applications
V
DDQ
, V
TT
, and VREF regulation for DDRAM memory
systems
- Main Memory in AMD Athlon and K8, Pentium
III, Pentium IV, Transmeta, PowerPC, AlphaPC, and
UltraSparc based computer systems
- Video memory in graphics systems
High-power tracking DC-DC regulators
PART NUMBER
TEMP
RANGE(
o
C)
PACKAGE
PKG.
DWG. #
ISL6530CB*
0 to 70
24 Lead SOIC
M24.3
ISL6530CBZ*
(See Note)
0 to 70
24 Lead SOIC
(Pb-free)
M24.3
ISL6530CR*
0 to 70
32 Lead 5x5 QFN
L32.5x5
ISL6530CRZ*
(See Note)
0 to 70
32 Lead 5x5 QFN
(Pb-free)
L32.5x5
ISL6530EVAL1, 2
Evaluation Board
* Add “-T” suffix for tape and reel option.
NOTE: Intersil Pb-free products employ special Pb-free material sets; molding
compounds/die attach materials and 100% matte tin plate termination finish, which are
RoHS compliant and compatible with both SnPb and Pb-free soldering operations.
Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that
meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C.
Data Sheet
November 15, 2004
FN9052.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2004. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
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