參數(shù)資料
型號(hào): ISL6567
廠商: Intersil Corporation
英文描述: Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-SOIC -40 to 85
中文描述: 多用途兩相降壓PWM控制器集成MOSFET驅(qū)動(dòng)器
文件頁(yè)數(shù): 17/26頁(yè)
文件大小: 659K
代理商: ISL6567
17
General Application Design Guide
This design guide is intended to provide a high-level
explanation of the steps necessary to create a multi-phase
power converter. It is assumed that the reader is familiar with
many of the basic skills and techniques referenced below. In
addition to this guide, Intersil provides complete reference
designs that include schematics, bills of materials, and
example board layouts for typical applications.
BIAS SUPPLY CONSIDERATIONS
The ISL6567 features an on-board shunt regulator capable of
sinking up to 100mA (minimally). This integrated regulator can
be used to produce the necessary bias voltage for the
controller and the MOSFETs. The integrated regulator can be
utilized directly, via a properly sized resistor, as shown in
Figure 17, or via an external NPN transistor and additional
resistors when either the current needed or the power being
dissipated becomes too large to be handled inside the
ISL6567 in the given operating environment.
A first step in determining the feasibility and selecting the
proper bias regulator configuration consists in determining
the maximum bias current required by the circuit. While the
bias current required by the ISL6567 is listed in the
Electrical
Specifications
table, the bias current required by the
controlled MOSFETs needs be calculated. The following
equation helps determine this bias current function of the
sum of the gate charge of all the controlled MOSFETs at 5V
V
GS
, Q
GTOTAL
, and the switching frequency, F
SW
:
Total required bias current, I
BIAS
, sums up the ISL6567’s
bias current, I
VCC
, to that required by the MOSFETs, I
B
.
The maximum bias current, I
BIAS
, that can be obtained via
the internal shunt regulator and a simple external resistor is
characterized in Figure 18 and can also be determined using
the following equation:
To exemplify the use, for an input voltage ranging from 10V
to 14V, find the intersection of the
V
IN
= 4V curve with the
V
INmin
= 10V mark and project the result on the Y axis to
find the maximum bias current obtainable (approximately
56% of the maximum current obtainable via the integrated
shunt regulator, I
VREG_MAX
).
Once the maximum obtainable bias current, I
BIAS_MAX
, is
determined, and providing it is greater than the bias current,
I
BIAS
, required by the circuit, R
SHUNT
can be determined
based on the lowest input voltage, V
INMIN
:
Figure 19 helps with a quick resistor selection based on the
previous guidelines presented. Divide the value thus
obtained by the maximum desired bias current, I
BIAS
, to
obtain the actual resistor value to be used.
FIGURE 17. INTERNAL SHUNT REGULATOR USE WITH
EXTERNAL RESISTOR (PASSIVE
CONFIGURATION)
-
+
EXTERNAL CIRCUIT
ISL6567
SHUNT REG
E/A
POR
CIRCUIT
VREG
R
BIAS
V
IN
VREF
VCC
PVCC
I
B
Q
GTOTAL
F
SW
I
BIAS
I
VCC
I
B
+
=
FIGURE 18. NORMALIZED MAXIMUM BIAS CURRENT
OBTAINABLE IN PASSIVE CONFIGURATION vs
INPUT VOLTAGE RANGE CHARACTERISTIC;
V
VCC
= 5V
V
IN
= 1V
V
IN
= 2V
V
IN
= 3V
V
IN
= 4V
V
IN
= 5V
V
IN
= 6V
V
IN
= 7V
V
IN
= 8V
7
8
V
INmin
(V)
9
10
11
0%
20%
40%
60%
80%
90%
I
B
V
)
70%
50%
30%
10%
6
I
BIASMAX
I
VREGMAX
V
V
INMAX
V
VCC
-----------------------–
=
R
BIAS
V
------------------------------------------
V
BIAS
=
ISL6567
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