- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383161 > ISL6612AECBZ-T (INTERSIL CORP) LJT 4C 4#20 SKT RECP PDF資料下載
參數(shù)資料
| 型號(hào)： | ISL6612AECBZ-T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | LJT 4C 4#20 SKT RECP |
| 中文描述： | HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | ROHS COMPLIANT, PLASTIC, SOIC-8 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 325K |
| 代理商： | ISL6612AECBZ-T |
9
FN9159.4
July 25, 2005
the selected MOSFETs. The total gate drive power losses
due to the gate charge of MOSFETs and the driver’s internal
circuitry and their corresponding average driver current can
be estimated with Equations 2 and 3, respectively,
where the gate charge (Q
G1
and Q
G2
) is defined at a
particular gate to source voltage (V
GS1
and V
GS2
) in the
corresponding MOSFET datasheet; I
Q
is the driver’s total
quiescent current with no load at both drive outputs; N
Q1
and N
Q2
are number of upper and lower MOSFETs,
respectively; UVCC and LVCC are the drive voltages for
both upper and lower FETs, respectively. The I
Q*
VCC
product is the quiescent power of the driver without
capacitive load and is typically 116mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R
G1
and R
G2
) and the internal gate resistors
(R
GI1
and R
GI2
) of MOSFETs. Figures 3 and 4 show the
typical upper and lower gate drives turn-on transition path.
The power dissipation on the driver can be roughly
estimated as:
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
and to promote clean drive signals.
P
Qg_TOT
P
Qg_Q1
P
Qg_Q2
I
Q
VCC
+
+
=
(EQ. 2)
P
Qg_Q1
Q
---------------------------------------
UVCC
2
GS1
F
SW
N
Q1
=
P
Qg_Q2
Q
--------------------------------------
LVCC
2
GS2
F
SW
N
Q2
=
I
DR
Q
-----------------------------------------------------
UVCC
GS1
N
Q
----------------------------------------------------
LVCC
GS2
N
+
F
SW
I
Q
+
=
(EQ. 3)
P
DR
P
DR_UP
P
DR_LOW
I
Q
VCC
+
+
=
(EQ. 4)
P
DR_UP
R
HI1
R
EXT1
---------------+
R
LO1
R
EXT1
---------------+
+
P
---------------------
=
P
DR_LOW
R
HI2
R
EXT2
---------------+
R
LO2
R
EXT2
-----------------+
+
P
---------------------
=
R
EXT1
R
G1
R
Q1
-------------
+
=
R
EXT2
R
G2
R
Q2
-------------
+
=
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Q1
D
S
G
R
GI1
R
G1
BOOT
R
HI1
C
DS
C
GS
C
GD
R
LO1
PHASE
UVCC
LVCC
Q2
D
S
G
R
GI2
R
G2
R
HI2
C
DS
C
GS
C
GD
R
LO2
ISL6612A, ISL6613A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL6612AEIB | Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6612AEIB-T | Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| ISL6612AEIBZ | Circular Connector; No. of Contacts:43; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| ISL6612AIB-T | Circular Connector; No. of Contacts:4; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:12-4 RoHS Compliant: No |
| ISL6612AIR-T | Circular Connector; No. of Contacts:6; Series:MS27473; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:8-35 RoHS Compliant: No |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL6612AEIB | 功能描述:IC MOSFET DRVR SYNC BUCK 8EPSOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6612AEIB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8EPSOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:40ns 電流 - 峰:9A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應(yīng)商設(shè)備封裝:TO-263 包裝:管件 |
| ISL6612AEIBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8EPSOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127 |
| ISL6612AEIBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8EPSOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:6,000 系列:* |
| ISL6612AIB | 制造商:Intersil Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。