ISL84715, ISL84716
9
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FN6087.3
February 23, 2012
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT: 57
PROCESS:
Submicron CMOS
FIGURE 15. OFF ISOLATION
Typical Performance Curves T
A = +25°C, unless otherwise specified (Continued)
FREQUENCY (Hz)
1k
100k
1M
100M 500M
10k
10M
100
0
10
20
30
40
50
60
70
80
90
V+ = 1.8V to 3.6V
O
F
IS
OL
A
T
IO
N
(d
B)