參數(shù)資料
型號(hào): ISL84781IV-T
廠商: Intersil
文件頁(yè)數(shù): 10/11頁(yè)
文件大?。?/td> 0K
描述: IC MUX/DEMUX 8X1 16TSSOP
標(biāo)準(zhǔn)包裝: 2,500
功能: 多路復(fù)用器/多路分解器
電路: 1 x 8:1
導(dǎo)通狀態(tài)電阻: 750 毫歐
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.6 V ~ 3.6 V
電流 - 電源: 50nA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 16-TSSOP
包裝: 帶卷 (TR)
8
FN6095.4
October 28, 2010
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Typical Performance Curves TA = +25°C, Unless Otherwise Specified
FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 11. CHARGE INJECTION vs SWITCH VOLTAGE
01
2
3
4
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
r ON
(
Ω
)
VCOM (V)
ICOM = 100mA
V+ = 3V
V+ = 2.7V
V+ = 1.8V
V+ = 3.6V
V+ = 1.65V
0.30
0.35
0.40
0.45
0.50
0.55
r ON
(
Ω
)
VCOM (V)
0
0.5
1.0
1.5
2.0
2.5
3.0
+25°C
+85°C
-40°C
V+ = 3V
ICOM = 100mA
0
0.5
1.0
1.5
2.0
r ON
(
Ω
)
VCOM (V)
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
0.70
+85
°C
-40
°C
+25
°C
V+ = 1.8V
ICOM = 100mA
0
0.5
1.0
1.5
2.0
2.5
3.0
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
Q
(p
C)
VCOM (V)
V+ = 1.8V
V+ = 3V
ISL84781
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