FN6097.3 November 17, 2004 resistance degrade at lower supply voltages. Refer to the electrical specification tables and Typical Performance<" />
參數(shù)資料
型號: ISL84782IRZ-T
廠商: Intersil
文件頁數(shù): 11/12頁
文件大小: 0K
描述: IC MUX/DEMUX DUAL 4X1 16TQFN
標(biāo)準(zhǔn)包裝: 1
功能: 多路復(fù)用器/多路分解器
電路: 2 x 4:1
導(dǎo)通狀態(tài)電阻: 750 毫歐
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.6 V ~ 3.6 V
電流 - 電源: 50nA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 16-QFN-EP(3x3)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: ISL84782IRZ-TDKR
8
FN6097.3
November 17, 2004
resistance degrade at lower supply voltages. Refer to the
electrical specification tables and Typical Performance
curves for details.
V+ and GND power the internal logic (thus setting the digital
switching point) and level shifters. The level shifters convert
the logic levels to switched V+ and V- signals to drive the
analog switch gate terminals.
Logic-Level Thresholds
This device is 1.8V CMOS compatible (0.5V and 1.4V) over
a supply range of 2.0V to 3.6V (see Figure 13). At 3.6V the
VIH level is about 1.27V. This is still below the 1.8V CMOS
guaranteed high output minimum level of 1.4V, but noise
margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50
systems, signal response is reasonably flat even past
10MHz with a -3dB bandwidth of 70MHz (see Figure 17).
The frequency response is very consistent over a wide V+
range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal feed
through from a switch’s input to its output. Off Isolation is the
resistance to this feed through, while Crosstalk indicates the
amount of feed through from one switch to another.
Figure 18 details the high Off Isolation and Crosstalk
rejection provided by this family. At 100kHz, Off Isolation is
about 65dB in 50
systems, decreasing approximately 20dB
per decade as frequency increases. Higher load
impedances decrease Off Isolation and Crosstalk rejection
due to the voltage divider action of the switch OFF
impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
0
1
234
R
ON
(
)
VCOM (V)
ICOM = 100mA
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0.75
V+ = 3V
V+ = 1.8V
V+ = 3.6V
V+ = 1.65V
V+ = 2.7V
R
ON
(
)
VCOM (V)
00.511.522.5
3
V+ = 3V
ICOM = 100mA
0.35
0.4
0.45
0.5
0.55
0.6
0.65
25
°C
85
°C
-40
°C
ISL84782
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