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參數(shù)資料
| 型號(hào)： | ISL9011IRRMZ-T |
| 廠商： | Intersil Corporation |
| 英文描述： | Dual LDO with Low Noise, Low IQ, and High PSRR |
| 中文描述： | 雙路LDO穩(wěn)壓器具有低噪音，低智商，及高PSRR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 287K |
| 代理商： | ISL9011IRRMZ-T |
5
FN9219.1
October 13, 2005
DEVICE START-UP CHARACTERISTICS
Device Enable TIme
T
EN
Time from assertion of the ENx pin to when the output voltage
reaches 95% of the VO(nom)
250
500
μ
s
LDO Soft-start Ramp Rate
T
SSR
Slope of linear portion of LDO output voltage ramp during start-
up
30
60
μ
s/V
EN1, EN2 PIN CHARACTERISTICS
Input Low Voltage
V
IL
-0.3
0.5
V
Input High Voltage
V
IH
1.4
V
IN
+0.3
V
Input Leakage Current
I
IL
, I
IH
0.1
μ
A
Pin Capacitance
C
PIN
Informative
5
pF
NOTES:
7. Guaranteed by design and characterization.
8. VOx = 0.98 * VOx(NOM); Valid for VOx greater than 1.85V.
Electrical Specifications
Unless otherwise noted, all parameters are guaranteed over the operational supply voltage and temperature
range of the device as follows:
T
A
= -40°C to +85°C; V
IN
= (V
O
+1.0V) to 6.5V with a minimum V
IN
of 2.3V; C
IN
= 1
μ
F; C
O
= 1
μ
F;
C
BYP
= 0.01
μ
F
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISL9011
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