參數(shù)資料
型號(hào)： ISL9N307AD3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 50 A, 30 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 10/11頁
文件大?。?/td> 189K
代理商： ISL9N307AD3ST
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
I
SPICE Thermal Model
REV May 2001
ISL9N307AD3STT
CTHERM1 th 6 2.4e-3
CTHERM2 6 5 4.8e-3
CTHERM3 5 4 6.9e-3
CTHERM4 4 3 7e-3
CTHERM5 3 2 7.4e-3
CTHERM6 2 tl 2.4e-2
RTHERM1 th 6 4.6e-3
RTHERM2 6 5 1e-2
RTHERM3 5 4 3.4e-2
RTHERM4 4 3 2.2e-1
RTHERM5 3 2 3e-1
RTHERM6 2 tl 5.1e-1
SABER Thermal Model
SABER thermal model ISL9N307AD3STT
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.4e-3
ctherm.ctherm2 6 5 = 4.8e-3
ctherm.ctherm3 5 4 = 6.9e-3
ctherm.ctherm4 4 3 = 7e-3
ctherm.ctherm5 3 2 = 7.4e-3
ctherm.ctherm6 2 tl = 2.4e-2
rtherm.rtherm1 th 6 = 4.6e-3
rtherm.rtherm2 6 5 = 1e-2
rtherm.rtherm3 5 4 = 3.4e-2
rtherm.rtherm4 4 3 = 2.2e-1
rtherm.rtherm5 3 2 = 3e-1
rtherm.rtherm6 2 tl = 5.1e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N307AP3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N307AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N308AD3 功能描述:MOSFET N-Ch UltraFET Trench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N308AD3ST 功能描述:MOSFET N-Ch UltraFET Trench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N308AP3 功能描述:MOSFET N-Ch Trench MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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