參數(shù)資料
型號： ISL9N322AD3ST
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： POWER SUP SWITCHER 41W 5.1V MED
中文描述： 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 1/11頁
文件大?。?/td> 135K
代理商： ISL9N322AD3ST
2002 Fairchild Semiconductor Corporation
January 2002
Rev.B, January 2002
I
ISL9N322AD3ST
N-Channel Logic Level UltraFET Trench MOSFET
30V, 20A, 0.022
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.018
(Typ), V
GS
= 10V
r
DS(ON)
= 0.028
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 9nC, V
GS
= 5V
Q
gd
(Typ) =3nC
C
ISS
(Typ) =970pF
MOSFET Maximum Ratings
T
A
=25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
30
±
20
Units
V
V
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GS
I
D
20
20
8
A
A
A
A
W
C
= 25
= 100
= 25
o
C, V
o
C, V
o
C, V
GS
= 10V)
= 4.5V)
= 10V, R
C
GS
C
GS
θ
JA
=52
o
C)
Figure 4
50
0.33
-55 to 175
P
D
o
C
W/
o
o
C
T
J
, T
STG
C
R
R
R
θ
JC
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
3
o
C/W
o
C/W
o
C/W
θ
JA
100
52
θ
JA
2
copper pad area
Device Marking
N322AD
Device
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
ISL9N322AD3ST
GATE
SOURCE
DRAIN (FLANGE)
D
G
S
TO-252
PWM Optimized
相關(guān)PDF資料
PDF描述
ISL9N322AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N322AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9R2480G2 24A, 800V Stealth⑩ Diode
ISL9R860S3ST Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N322AP3 功能描述:MOSFET N-Ch PWM Optimized Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N322AS3ST 功能描述:MOSFET N-Ch MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N327AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N7030BLP3 功能描述:MOSFET 30V 0.009 Ohm N-Ch Logic Level 74a RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N7030BLS3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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