參數(shù)資料
型號(hào): ISO808
英文描述: Isolated 12-Bit Sampling ANALOG-TO-DIGITAL CONVERTER
中文描述: 隔離12位采樣模擬到數(shù)字轉(zhuǎn)換器
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 171K
代理商: ISO808
3
ISO808
POWER SUPPLIES
Specified Performance
V
DIG1
V
ANA
V
DIG2
I
DIG1
I
ANA
I
DIG2
Power Dissipation
Must be
V
ANA
+4.75
+4.75
+4.75
+5
+5
+5.25
+5.25
+5.25
V
V
V
4.2
16
10.8
175
mA
mA
mA
mW
V
ANA
= V
DIG
= 5V, f
S
= 100kHz
TEMPERATURE RANGE
Specified Performance
Storage
Thermal Resistance,
φ
JA
Plastic DIP
–40
–65
+85
+150
°
C
°
C
75
°
C/W
NOTES: (1) LSB means Least Significant Bit. One LSB for the
±
10V input range is 4.88mV. (2) Typical rms noise at worst case transition. (3) As measured with
fixed resistors shown in Figure 7b. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale or +Full Scale untrimmed
deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5)
All specifications in dB are referred to a full-scale input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades
to 60dB. (7) Recovers to specified performance after 2 x FS input overvoltage. (8) All devices receive a 1s test. Failure criterion is
5 pulses of
5pC. (9) Tested
at 2500Vrms, 50Hz limit 10
μ
A.
SPECIFICATIONS
(CONT)
ELECTRICAL
At T
A
= –40
°
C to +85
°
C, f
S
= 100kHz, V
DIG
= V
ANA
= +5V, using internal reference and fixed resistors shown in Figure 3, unless otherwise specified.
ISO808P
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ABSOLUTE MAXIMUM RATINGS
Analog Inputs: R1
IN
...........................................................................
±
25V
R2
IN
...........................................................................
±
25V
R3
...........................................................................
±
25V
CAP .................................... V
ANA
+0.3V to AGND2 –0.3V
REF ...........................................Indefinite Short to AGND,
Momentary Short to V
Ground Voltage Differences: DGND and AGND...............................
±
0.3V
DGND, AGND, and GND
ISO...........
1563Vrms
V
ANA
....................................................................................................... 7V
V
DIG
to V
...................................................................................... +0.3V
V
........................................................................................................ 7V
Digital Inputs .............................................................. –0.3V to V
+0.3V
Maximum Junction Temperature ................................................... +165
°
C
Internal Power Dissipation ............................................................. 700mW
Lead Temperature (soldering, 10s)................................................ +300
°
C
MAXIMUM INTEGRAL
LINEARITY ERROR (LSB)
TYPICAL SIGNAL-TO-
(NOISE + DISTORTION) RATIO (dB)
SPECIFICATION
TEMPERATURE RANGE (
°
C)
PRODUCT
PACKAGE
ISO808P
±
0.9
70
–40
°
C to +85
°
C
28-Pin Plastic DIP
PACKAGE INFORMATION
PACKAGE DRAWING
NUMBER
(1)
PRODUCT
PACKAGE
ISO808P
28-Pin Plastic DIP
215-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Brown Corporation recommends that all integrated circuits
be handled and stored using appropriate ESD protection
methods.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
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