Specifications ispLSI 1016E USE ispLSI 1016EA FOR NEW DESIGNS Switching Test Conditions Figure 2. Test Load DC Electrical Characteristics Ove" />
參數(shù)資料
型號: ISPLSI 1016E-125LTN44
廠商: Lattice Semiconductor Corporation
文件頁數(shù): 8/13頁
文件大?。?/td> 0K
描述: IC PLD ISP 32I/O 125MHZ 44TQFP
標準包裝: 160
系列: ispLSI® 1000E
可編程類型: 系統(tǒng)內(nèi)可編程
最大延遲時間 tpd(1): 7.5ns
電壓電源 - 內(nèi)部: 4.75 V ~ 5.25 V
邏輯元件/邏輯塊數(shù)目: 16
門數(shù): 2000
輸入/輸出數(shù): 32
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 44-TQFP
供應(yīng)商設(shè)備封裝: 44-TQFP(10x10)
包裝: 托盤
其它名稱: ISPLSI1016E-125LTN44
4
Specifications ispLSI 1016E
USE
ispLSI
1016EA
FOR
NEW
DESIGNS
Switching Test Conditions
Figure 2. Test Load
DC Electrical Characteristics
Over Recommended Operating Conditions
Input Pulse Levels
Table 2-0003/1016E
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
-125
-100, -80
≤ 2 ns
≤ 3 ns
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
R2
CL
A
470Ω
390Ω
35pF
B
390Ω
35pF
470Ω
390Ω
35pF
Active High
Active Low
C
470Ω
390Ω
5pF
390Ω
5pF
Active Low to Z
at V +0.5V
OL
Active High to Z
at V
-0.5V
OH
Table 2-0004/1016E
+ 5V
R1
R2
CL*
Device
Output
Test
Point
*CL includes Test Fixture and Probe Capacitance.
0213a
VOL
SYMBOL
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V = 5V and T = 25°C.
4. Maximum I
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum I
.
Table 2-0007/1016E
1
VOH
IIH
IIL
IIL-isp
PARAMETER
IIL-PU
IOS
2, 4
ICC
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
Input or I/O Low Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I
= -4 mA
3.5V ≤ V ≤ V
0V ≤ V ≤ V (Max.)
0V ≤ V ≤ V
V = 5V, V
= 0.5V
V = 0.5V, V = 3.0V
f
= 1 MHz
OL
OH
IN
IL
IN
CC
IN
IL
IN
IL
CC
OUT
CLOCK
IL
IH
CONDITION
MIN.
TYP.
MAX.
UNITS
3
2.4
90
0.4
10
-10
-150
-200
V
μA
mA
CC
A
OUT
CC
Commercial
Industrial
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ispLSI1016E-125LTN44 功能描述:CPLD - 復(fù)雜可編程邏輯器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI1016E125LTN44I 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD
ISPLSI1016E80LJ 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD
ispLSI1016E-80LJ 功能描述:CPLD - 復(fù)雜可編程邏輯器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存儲類型:EEPROM 大電池數(shù)量:128 最大工作頻率:333 MHz 延遲時間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI1016E80LJI 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:In-System Programmable High Density PLD