Specifications ispLSI 2128VE 4 Switching Test Conditions Figure 2. Test Load Input Pulse Levels Table 2 - 0003/2128VE Input Rise and Fall Time " />
參數(shù)資料
型號(hào): ISPLSI 2128VE-250LB100
廠商: Lattice Semiconductor Corporation
文件頁數(shù): 15/20頁
文件大?。?/td> 0K
描述: IC PLD ISP 64I/O NS 100CABGA
標(biāo)準(zhǔn)包裝: 184
系列: ispLSI® 2000VE
可編程類型: 系統(tǒng)內(nèi)可編程
最大延遲時(shí)間 tpd(1): 4.0ns
電壓電源 - 內(nèi)部: 3 V ~ 3.6 V
邏輯元件/邏輯塊數(shù)目: 32
宏單元數(shù): 128
門數(shù): 6000
輸入/輸出數(shù): 128
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 100-LFBGA
供應(yīng)商設(shè)備封裝: 100-CABGA(10x10)
包裝: 托盤
其它名稱: ISPLSI2128VE-250LB100
Specifications ispLSI 2128VE
4
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
Table 2 - 0003/2128VE
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
≤ 1.5ns 10% to 90%
1.5V
See Figure 2
3-state levels are measured 0.5V from steady-state active level.
DC Electrical Characteristics
Over Recommended Operating Conditions
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
R2
CL
A
316
348
35pF
B
348
35pF
316
348
35pF
Active High
Active Low
C
316
348
5pF
348
5pF
Active Low to Z
at V +0.5V
OL
Active High to Z
at V
-0.5V
OH
Table 2-0004/2128VE
VOL
SYMBOL
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 3.3V and T = 25°C.
4. Maximum I
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I
.
Table 2-0007/2128VE
1
VOH
IIH
IIL
IIL-isp
PARAMETER
IIL-PU
IOS
2, 4
ICC
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
Input or I/O Low Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I
= -4 mA
0V ≤ V ≤ V (Max.)
0V ≤ V ≤ V
V = 3.3V, V
= 0.5V
V = 0.0V, V = 3.0V
f
= 1 MHz
OL
OH
IN
IL
IN
IL
IN
IL
CC
OUT
CLOCK
IL
IH
CONDITION
MIN.
TYP.
MAX.
UNITS
3
2.4
195
0.4
10
-10
-150
-100
V
A
mA
CC
A
OUT
CC
(V
- 0.2)V ≤ V ≤ V
V ≤ V ≤ 5.25V
CC
IN
CC
+ 3.3V
R1
R2
CL*
Device
Output
Test
Point
*CL includes Test Fixture and Probe Capacitance.
0213A/2128VE
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ISPLSI2128VE-250LB100 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2128VE250LB100I 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD
ISPLSI2128VE250LB208 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD
ISPLSI2128VE-250LB208 功能描述:CPLD - 復(fù)雜可編程邏輯器件 RoHS:否 制造商:Lattice 系列: 存儲(chǔ)類型:EEPROM 大電池?cái)?shù)量:128 最大工作頻率:333 MHz 延遲時(shí)間:2.7 ns 可編程輸入/輸出端數(shù)量:64 工作電源電壓:3.3 V 最大工作溫度:+ 90 C 最小工作溫度:0 C 封裝 / 箱體:TQFP-100
ISPLSI2128VE250LB208I 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:3.3V In-System Programmable SuperFAST⑩ High Density PLD