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參數(shù)資料
| 型號： | ITF86130SK8T |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel, Logic Level, Power MOSFET(N溝道邏輯電平功率MOS場效應(yīng)管) |
| 中文描述： | 14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 174K |
| 代理商： | ITF86130SK8T |
1
TM
File Number
4798.5
ITF86130SK8T
14A, 30V, 0.0078 Ohm, N-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
Symbol
Features
Ultra Low On-Resistance
- r
DS(ON)
= 0.0078
,
V
GS
=
10V
- r
DS(ON)
= 0.010
,
V
GS
=
4.5V
- r
DS(ON)
= 0.012
,
V
GS
=
4.0V
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
Peak Current vs Pulse Width Curve
Transient Thermal Impedance Curve vs Board Mounting
Area
Switching Time vs R
GS
Curves
BRANDING DASH
1
2
3
4
5
SOURCE(2)
DRAIN(8)
SOURCE(1)
DRAIN(7)
DRAIN(6)
DRAIN(5)
SOURCE(3)
GATE(4)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86130SK8T
SO8
86130
NOTE: When ordering, use the entire part number. ITF86130SK8T
is available only in tape and reel.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
ITF86130SK8T
30
30
±
20
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76in
2
(490.3mm
2
) copper pad at 10s.
14.0
12.0
7.0
7.0
Figure 4
2.5
20
-55 to 150
A
A
A
A
A
W
mW/
o
C
o
C
300
260
o
C
o
C
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
September 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright Intersil Corporation 2000
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